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BOE has Made a Breakthrough in the Field of Oxide Semiconductor Display Technology

by Kamlesh Bhati
January 29, 2022
BOE Oxide Semiconductor Display Technology
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BOE Oxide Semiconductor Display Technology

As the demand for smart home living room entertainment and live commercial events grow, displays with large size, high resolution, and high refresh rates are attracting the attention of major manufacturers, and the enhancement of semiconductor display performance is facing a revolution, of which array drive of the backplane is one of the core technologies.

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Sina Technology reported that BOE InnovationHub announced recently that BOE has made a breakthrough in the field of oxide semiconductor display technology, overcoming industry challenges such as easy diffusion, easy oxidation, and easy drilling and etching of copper (Cu).

At the same time, there is also a great breakthrough in the research and development of high mobility 30+cm2/Vs oxide technology, which lays the technical foundation for the subsequent performance improvement of high-end products.

BOE 13.3-inch oxide Full In Cell UHD ultra-narrow bezel display
BOE 13.3-inch oxide Full In Cell UHD ultra-narrow bezel display

BOE is the first in the industry to realize the mass production of copper interconnected stack structure, and the integration of high refresh rate, high resolution, low power consumption oxide display technology, breaking the foreign monopoly and continuing to launch a series of high-end technologies and products in the industry such as low power consumption, ultra-narrow edge, 500Hz+ gaming display, oversized 8K Oxide 120Hz, and invertible refresh rate display.

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BOE 27-inch Oxide FHD 500 Hz+
BOE 27-inch Oxide FHD 500 Hz+

It is worth mentioning that BOE also showcased the 27-inch Oxide FHD 500 Hz+ display with the world’s highest refresh rate display. According to the introduction, this display adopts a high mobility Oxide backplane, supports 8Lane eDP output, true 8bit output, and has a 1ms response.

Officially, BOE has creatively developed copper diffusion blocking technology, proposed unique nitrogen-oxygen balance theory, interface repair theory, while industry-academia-research joint to achieve breakthroughs in materials, device structure, and principles, solving the mass production challenges of oxide semiconductor display technology, and being the first to achieve mass production in China.

Meanwhile, the integrated gate drive circuit embedded in the array substrate, the integrated technology of touch drive, and the thin film optical model with high transmittance have realized both the product performance improvement and the technology upgrade from traditional amorphous silicon TFT to oxide conductor display.

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Tags: BOE
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