Micron 176-layer NAND Technology UFS 3.1
Micron Technology recently announced that it has begun shipping the world’s first batch of universal flash UFS 3.1 mobile solutions based on 176-layer NAND technology with 75% faster sequential write and random read performance than previous generations.
Micron said that the product can achieve 75% sequential write and random read performance improvement compared to its predecessor, and can download a 2-hour 4K movie in just 9.6 seconds (Assumes a file size of 14GB per movie). According to the introduction, Micron’s 176-layer UFS 3.1 solution mixed workload performance compared to the previous generation of products increased by 15%, so that cell phones start and switch applications faster.
Fang Fei, President of Product Line of Honor Terminal Co., Ltd. said, “Honor’s all-in-one flagship Magic3 series will be the first to carry the industry’s first 176-layer NAND technology UFS 3.1 from Micron.”
The Magic3 series, Honor’s flagship, will be the first to feature Micron’s UFS 3.1, the industry’s first 176-layer NAND technology, a high-performance 3D NAND solution that will provide a fast and smooth experience for Honor’s cell phone users in simultaneous multi-application use, as well as high-speed download and storage scenarios.
Micron Technology
Micron’s 176-layer NAND Flash Memory features:
- Better performance: Micron’s 176-layer UFS 3.1 solution delivers 75% faster sequential write speeds and 70% faster random read speeds than its predecessor, dramatically improving application performance.
- Faster download speeds: Sequential write speeds of up to 1,500 MB/sec means that a 10-minute 4K (2,160-pixel resolution) web video can be downloaded in 0.7 seconds (Assuming the video file size is 1GB) and a 2-hour 4K movie can be downloaded in 9.6 seconds.
- Smoother mobile experience: The superior performance of Micron’s 176-layer UFS 3.1 solution reduces response latency by approximately 10% compared to the previous generation, ensuring a more reliable mobile experience.
- Longer device life: Micron’s 176-layer mobile solution can write twice as many total bytes as the previous generation (The data is based on Micron’s previous generation of floating gate 96-layer NAND UFS 3.1 compared to 176-layer NAND products with WriteBooster disabled), which means twice the total amount of data can be stored without compromising device reliability. Even heavy mobile users will notice a dramatic increase in smartphone lifetime.
According to Micron Technology, Micron’s compact 176-layer NAND is perfectly suited to the high capacity and small footprint requirements of mobile devices. Previously, Micron announced in June that it had shipped PCIe 4.0 solid-state drives with 176 layers of NAND, offering flexible design options with high performance and low power consumption for professional workstations and ultra-thin notebooks. Now, Micron is bringing its industry-first cutting-edge NAND technology and performance to smartphones, enabling a more responsive mobile experience and true multitasking between applications.
5G communication technology can increase the transfer rate of mobile devices to several gigabytes, but this ultra-fast mobile experience must have a high-performance hardware foundation,” said Raj Talluri, senior vice president and general manager of Micron’s Mobile Products Business Unit. Micron’s 176-layer NAND enables a technological breakthrough that delivers unparalleled performance for smartphones, enabling consumers to easily and quickly experience rich multimedia content on the go.”
This high-performance 3D NAND solution will bring users a fast and smooth experience when using multiple applications at the same time, as well as high-speed downloading and storage,” said Fang Fei, president of the product line of Honor Terminal Co. This high-performance 3D NAND solution will provide a fast and smooth experience for users of Honor phones in simultaneous multi-application use, as well as high-speed download and storage scenarios.
Micron 176-Layer UFS3.1 Mobile Solution Availability: Micron’s 176-layer discrete NAND-based UFS 3.1 mobile solutions are now shipping publicly in 128GB, 256GB, and 512GB capacities.
