UFS 3.0 flash memory running exposure: sequential read up to 2.3GB/s

UFS 3.0 Flash Memory speed test on AndroBench

​According to the news of the digital blogger Ice Universe, the AndroBench running point of UFS 3.0 flash memory has been exposed, the sequential reading speed has reached 2279.9MB/s, and the sequential writing speed has reached 1801.1MB/s. , to achieve the current high-quality NVMe solid state speed and random read 146.4MB / s, random write 137.5 MB/s.

UFS 3.0 Flash memory

It is reported that in 2017, JEDEC Solid State Technology Association introduced a new UFS3.0 standard. Compared with the previous generation UFS2.1, the bandwidth is higher and the voltage is lower than UFS 2.1, which can reduce the power consumption and heat of the device. The UFS 3.0 standard can achieve 11.6 Gbps on a single channel, twice the UFS 2.1 standard, while the dual-channel design can achieve a transmission bandwidth of up to 23.2 Gbps. The UFS 3.0 operates at 2.5V, compared to the previous generation of 2.7V to 3.6V. Lower.

At the 4G/5G summit held last year, Samsung revealed that it will launch UFS 3.0 commercial products in the first half of 2019 and commercial LPDDR5 memory in 2020.


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